Journal List > Prog Med Phys > v.26(4) > 1098494

Park, Kim, Choi, Lee, Cho, Ahn, Kim, Kim, Huh, Park, and Song: Evaluation of Fabricated Semiconductor Sensor for Verification of γ-ray Distribution in Brachytherapy

Abstract

In radiation therapy fields, a brachytherapy is a treatment that kills lesion of cells by inserting a radioisotope that keeps emitting radiation into the body. We currently verify the consistency of radiation treatment plan and dose distribution through film/screen system (F/S system), provide therapy after checking dose. When we check dose distribution, F/S systems have radiation signal distortion because there is low resolution by penumbra depending on the condition of film developed. In this study, We fabricated a HgI2 Semiconductor radiation sensor for base study in order that we verify the real dose distribution weather it's same as plans or not in brachytherapy. Also, we attempt to evaluate the feasibility of QA system by utilizing and evaluating the sensor to brachytherapy source. As shown in the result of detected signal with various source-to-detector distance (SDD), we quantitatively verified the real range of treatment which is also equivalent to treatment plans because only the low signal estimated as scatters was measured beyond the range of treatment. And the result of experiment that we access reproducibility on the same condition of γ-ray, we have made sure that the CV (coefficient of variation) is within 1.5 percent so we consider that the HgI2 sensor is available at QA of brachytherapy based on the result.

References

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Fig. 1.
Structure of material layer (a) and (b) diagram of fabricated sensors.
pmp-26-280f1.tif
Fig. 2.
Experimental setup.
pmp-26-280f2.tif
Fig. 3.
Corrected signals by increased thickness respectively.
pmp-26-280f3.tif
Fig. 4.
Corrected signals by increased distance.
pmp-26-280f4.tif
Fig. 5.
Comparison of film and digital sensor.
pmp-26-280f5.tif
Fig. 6.
Verification of γ-ray distribution by EBT film.
pmp-26-280f6.tif
Table 1.
Properties of semiconductor materials.
Material Atomic number Density (g/cm³) Band gap (eV) Work function (eV)
Si 14 2.33 1.12 3.76
Ge 32 5.32 0.74 2.98
CdTe 48.52 6.06 1.47 4.43
GaAs 31.33 5.36 1.36 4.51
HgI2 80.53 6.36 2.13 4.2
PbI2 82.52 6.16 2.6 7.68
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